Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/05/01 Vol. E98-CNo. 5pp. 429-433 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: RRAM, switching and conduction mechanism, top electrode (TE),
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-CNo. 5pp. 634-638 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: L-shaped TFETs, subthreshold swing, steep slope, complementary logic function,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-CNo. 5pp. 837-841 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 3 dimensional NAND flash memory, operation scheme, program inhibition,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-CNo. 5pp. 820-825 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Tunnel Field-Effect Transistors, threshold voltage, VT-control doping region,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-CNo. 5pp. 826-830 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: vertical-channel TFET, field-coupling effect, source configuration,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-CNo. 5pp. 842-846 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: RRAM, conductive defect, cell thickness, reset current, set voltage, forming voltage, and low power,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-CNo. 5pp. 681-685 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 1T DRAM, cone, electric field concentration,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-CNo. 5pp. 596-601 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: NAND, flash memory, program inhibition, self-boosting, FinFET, device simulation,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-CNo. 5pp. 540-545 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Multi-Gate Technology Keyword: tunnel field-effect transistor, subthreshold swing,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-CNo. 5pp. 647-652 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: single electron transistor, recessed channel, MOSFET current suppression,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-CNo. 5pp. 653-658 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: NAND, flash memory, stacked NAND, vertical channel,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 988-993 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: 3-D devices, vertical ion implantation, doping profile, concentration peak, doping gradient,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 978-982 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Junction Formation and TFT Reliability Keyword: asymmetric MOSFET, LDD, mesa structure, sidewall spacer gate,