Keyword : bottom-side effect (BSE)


Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
Jang Gn YUN Il Han PARK Seongjae CHO Jung Hoon LEE Doo-Hyun KIM Gil Sung LEE Yoon KIM Jong Duk LEE Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5 ; pp. 742-746
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
2-bit recessed channel memorylifted-charge trapping node (L-CTN) schemeshort channel effect (SCE)second bit effect (SBE)bottom-side effect (BSE)VTH window
 Summary | Full Text:PDF