IEICE Trans

Byung-Gook PARK

Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell Sungjun KIM Min-Hwi KIM Seongjae CHO Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2016/05/01 Vol. E99-C No. 5 pp. 547-550 Type of Manuscript: BRIEF PAPER Category: Keyword: resistive random-access memory (RRAM), silicon nitride (Si₃N₄), bias polarity, switching parameters,
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Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals Sungjun KIM Sunghun JUNG Min-Hwi KIM Seongjae CHO Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/05/01 Vol. E98-C No. 5 pp. 429-433 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: RRAM, switching and conduction mechanism, top electrode (TE),
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Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel Min-Chul SUN Sang Wan KIM Garam KIM Hyun Woo KIM Hyungjin KIM Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 639-643 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: TFET, compatibility to CMOS technology flow, sigma-shape embedded SiGe source, recessed channel,
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L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications Sang Wan KIM Woo Young CHOI Min-Chul SUN Hyun Woo KIM Jong-Ho LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 634-638 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: L-shaped TFETs, subthreshold swing, steep slope, complementary logic function,
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Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics Kyung-Chang RYOO Jeong-Hoon OH Sunghun JUNG Hyungjin KIM Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 842-846 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: RRAM, conductive defect, cell thickness, reset current, set voltage, forming voltage, and low power,
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Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using V_T-Control Doping Region Hyungjin KIM Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 820-825 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Tunnel Field-Effect Transistors, threshold voltage, V_T-control doping region,
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Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Hyungjin KIM Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 826-830 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: vertical-channel TFET, field-coupling effect, source configuration,
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Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer) Se Hwan PARK Yoon KIM Wandong KIM Joo Yun SEO Hyungjin KIM Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/05/01 Vol. E95-C No. 5 pp. 837-841 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 3 dimensional NAND flash memory, operation scheme, program inhibition,
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A New 1T DRAM Cell: Cone Type 1T DRAM Cell Gil Sung LEE Doo-Hyun KIM Seongjae CHO Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 681-685 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 1T DRAM, cone, electric field concentration,
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Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer Dong Seup LEE Hong-Seon YANG Kwon-Chil KANG Joung-Eob LEE Jung Han LEE Seongjae CHO Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 540-545 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Multi-Gate Technology Keyword: tunnel field-effect transistor, subthreshold swing,
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Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 596-601 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: NAND, flash memory, program inhibition, self-boosting, FinFET, device simulation,
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Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation Sang Hyuk PARK Sangwoo KANG Seongjae CHO Dong-Seup LEE Jung Han LEE Hong-Seon YANG Kwon-Chil KANG Joung-Eob LEE Jong Duk LEE Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 647-652 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: single electron transistor, recessed channel, MOSFET current suppression,
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3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array Yoon KIM Seongjae CHO Gil Sung LEE Il Han PARK Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 653-658 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: NAND, flash memory, stacked NAND, vertical channel,
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Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL) Seongjae CHO Jung Hoon LEE Gil Sung LEE Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 620-626 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 3-D nonvolatile memory, NAND flash memory array, saturation current, channel potential barrier, gate-induced barrier lowering (GIBL),
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Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory Doo-Hyun KIM Il Han PARK Seongjae CHO Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 659-663 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: SONOS, flash memory, nitride-based charge trap memory, retention, multi-bit, double gate,
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Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design Jongwook JEON Ickhyun SONG Jong Duk LEE Byung-Gook PARK Hyungcheol SHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 627-634 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: CMOS, channel thermal noise, radio frequency integrated circuit (RFIC), low noise amplifier (LNA), noise figure,
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Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme Jang Gn YUN Il Han PARK Seongjae CHO Jung Hoon LEE Doo-Hyun KIM Gil Sung LEE Yoon KIM Jong Duk LEE Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 742-746 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 2-bit recessed channel memory, lifted-charge trapping node (L-CTN) scheme, short channel effect (SCE), second bit effect (SBE), bottom-side effect (BSE), V_TH window,
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Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI) Seongjae CHO Il Han PARK Jung Hoon LEE Jang-Gn YUN Doo-Hyun KIM Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 731-735 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: memory array, electrical interference, 3-D memory device, read operation, PCI (paired cell interference),
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Design and Simulation of Asymmetric MOSFETs Jong Pil KIM Woo Young CHOI Jae Young SONG Seongjae CHO Sang Wan KIM Jong Duk LEE Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 978-982 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Junction Formation and TFT Reliability Keyword: asymmetric MOSFET, LDD, mesa structure, sidewall spacer gate,
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Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices Seongjae CHO Jang-Gn YUN Il Han PARK Jung Hoon LEE Jong Pil KIM Jong-Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 988-993 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: 3-D devices, vertical ion implantation, doping profile, concentration peak, doping gradient,
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