Byung-Gook PARK


Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell
Sungjun KIM Min-Hwi KIM Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 547-550
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
resistive random-access memory (RRAM)silicon nitride (Si3N4)bias polarityswitching parameters
 Summary | Full Text:PDF

Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
Sungjun KIM Sunghun JUNG Min-Hwi KIM Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5  pp. 429-433
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
RRAMswitching and conduction mechanismtop electrode (TE)
 Summary | Full Text:PDF

Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel
Min-Chul SUN Sang Wan KIM Garam KIM Hyun Woo KIM Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 639-643
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
TFETcompatibility to CMOS technology flowsigma-shape embedded SiGe sourcerecessed channel
 Summary | Full Text:PDF

L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications
Sang Wan KIM Woo Young CHOI Min-Chul SUN Hyun Woo KIM Jong-Ho LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 634-638
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
L-shaped TFETssubthreshold swingsteep slopecomplementary logic function
 Summary | Full Text:PDF

Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics
Kyung-Chang RYOO Jeong-Hoon OH Sunghun JUNG Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 842-846
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
RRAMconductive defectcell thicknessreset currentset voltageforming voltageand low power
 Summary | Full Text:PDF

Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region
Hyungjin KIM Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 820-825
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Tunnel Field-Effect Transistorsthreshold voltageVT-control doping region
 Summary | Full Text:PDF

Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors
Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 826-830
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
vertical-channel TFETfield-coupling effectsource configuration
 Summary | Full Text:PDF

Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer)
Se Hwan PARK Yoon KIM Wandong KIM Joo Yun SEO Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 837-841
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
3 dimensional NAND flash memoryoperation schemeprogram inhibition
 Summary | Full Text:PDF

A New 1T DRAM Cell: Cone Type 1T DRAM Cell
Gil Sung LEE Doo-Hyun KIM Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 681-685
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
1T DRAMconeelectric field concentration
 Summary | Full Text:PDF

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer
Dong Seup LEE Hong-Seon YANG Kwon-Chil KANG Joung-Eob LEE Jung Han LEE Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 540-545
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Multi-Gate Technology
Keyword: 
tunnel field-effect transistorsubthreshold swing
 Summary | Full Text:PDF

Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
NANDflash memoryprogram inhibitionself-boostingFinFETdevice simulation
 Summary | Full Text:PDF

Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation
Sang Hyuk PARK Sangwoo KANG Seongjae CHO Dong-Seup LEE Jung Han LEE Hong-Seon YANG Kwon-Chil KANG Joung-Eob LEE Jong Duk LEE Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 647-652
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
single electron transistorrecessed channelMOSFET current suppression
 Summary | Full Text:PDF

3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array
Yoon KIM Seongjae CHO Gil Sung LEE Il Han PARK Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 653-658
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
NANDflash memorystacked NANDvertical channel
 Summary | Full Text:PDF

Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL)
Seongjae CHO Jung Hoon LEE Gil Sung LEE Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 620-626
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
3-D nonvolatile memoryNAND flash memory arraysaturation currentchannel potential barriergate-induced barrier lowering (GIBL)
 Summary | Full Text:PDF

Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
Doo-Hyun KIM Il Han PARK Seongjae CHO Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 659-663
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SONOSflash memorynitride-based charge trap memoryretentionmulti-bitdouble gate
 Summary | Full Text:PDF

Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
Jongwook JEON Ickhyun SONG Jong Duk LEE Byung-Gook PARK Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 627-634
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
CMOSchannel thermal noiseradio frequency integrated circuit (RFIC)low noise amplifier (LNA)noise figure
 Summary | Full Text:PDF

Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
Jang Gn YUN Il Han PARK Seongjae CHO Jung Hoon LEE Doo-Hyun KIM Gil Sung LEE Yoon KIM Jong Duk LEE Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 742-746
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
2-bit recessed channel memorylifted-charge trapping node (L-CTN) schemeshort channel effect (SCE)second bit effect (SBE)bottom-side effect (BSE)VTH window
 Summary | Full Text:PDF

Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI)
Seongjae CHO Il Han PARK Jung Hoon LEE Jang-Gn YUN Doo-Hyun KIM Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 731-735
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
memory arrayelectrical interference3-D memory deviceread operationPCI (paired cell interference)
 Summary | Full Text:PDF

Design and Simulation of Asymmetric MOSFETs
Jong Pil KIM Woo Young CHOI Jae Young SONG Seongjae CHO Sang Wan KIM Jong Duk LEE Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 978-982
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword: 
asymmetric MOSFETLDDmesa structuresidewall spacer gate
 Summary | Full Text:PDF

Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices
Seongjae CHO Jang-Gn YUN Il Han PARK Jung Hoon LEE Jong Pil KIM Jong-Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 988-993
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
3-D devicesvertical ion implantationdoping profileconcentration peakdoping gradient
 Summary | Full Text:PDF