Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-CNo. 5pp. 634-638 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: L-shaped TFETs, subthreshold swing, steep slope, complementary logic function,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-CNo. 5pp. 596-601 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: NAND, flash memory, program inhibition, self-boosting, FinFET, device simulation,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-CNo. 5pp. 653-658 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: NAND, flash memory, stacked NAND, vertical channel,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-CNo. 5pp. 776-779 Type of Manuscript: Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: random telegraph signal noise, FN stress, flash memory, MOSFET,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 968-972 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: trap depth, RTN, time constants, poly gate depletion effect, surface potential variation,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 988-993 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: 3-D devices, vertical ion implantation, doping profile, concentration peak, doping gradient,
