Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation

Sang Hyuk PARK  Sangwoo KANG  Seongjae CHO  Dong-Seup LEE  Jung Han LEE  Hong-Seon YANG  Kwon-Chil KANG  Joung-Eob LEE  Jong Duk LEE  Byung-Gook PARK  

IEICE TRANSACTIONS on Electronics   Vol.E92-C   No.5   pp.647-652
Publication Date: 2009/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.647
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
single electron transistor,  recessed channel,  MOSFET current suppression,  

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A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. Not only gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.