Keyword : retention


Evaluation of Performance in Vertical 1T-DRAM and Planar 1T-DRAM
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 847-853
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical type 1T-DRAMplanar type 1T-DRAMfloating body DRAMretention
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Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
Doo-Hyun KIM Il Han PARK Seongjae CHO Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 659-663
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SONOSflash memorynitride-based charge trap memoryretentionmulti-bitdouble gate
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Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell
Satoru OGASAWARA Sung-Min YOON Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 771-776
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectric-gate FETretention1T2Cmemory windowthreshold voltage
 Summary | Full Text:PDF

Tunnel Oxynitride Film Formation for Highly Reliable Flash Memory
Tomiyuki ARAKAWA Ryoichi MATSUMOTO Takahisa HAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6 ; pp. 819-824
Type of Manuscript:  Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Nonvolatile memories
Keyword: 
flash memoryoxynitride tunnel filmendurancedisturbanceretention
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