Keyword : nitride-based charge trap memory

Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
Doo-Hyun KIM Il Han PARK Seongjae CHO Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 659-663
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
SONOSflash memorynitride-based charge trap memoryretentionmulti-bitdouble gate
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