Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel

Min-Chul SUN  Sang Wan KIM  Garam KIM  Hyun Woo KIM  Hyungjin KIM  Byung-Gook PARK  

IEICE TRANSACTIONS on Electronics   Vol.E96-C   No.5   pp.639-643
Publication Date: 2013/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E96.C.639
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
TFET,  compatibility to CMOS technology flow,  sigma-shape embedded SiGe source,  recessed channel,  

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A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is proposed. The gate facing the source effectively focuses the E-field at the tip of the source and eliminates the gradual turn-on issue of planar TFETs. The fabrication scheme modified from the state-of-the-art 45 nm/32 nm CMOS technology flows provides a unique benefit in the co-integrability and the control of ID-VGS characteristics. The feasibility is verified with TCAD process simulation of the device with 14 nm of the gate dimension. The device simulation shows 5-order change in the drain current with a gate bias change less than 300 mV.