3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array

Yoon KIM  Seongjae CHO  Gil Sung LEE  Il Han PARK  Jong Duk LEE  Hyungcheol SHIN  Byung-Gook PARK  

IEICE TRANSACTIONS on Electronics   Vol.E92-C   No.5   pp.653-658
Publication Date: 2009/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.653
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
NAND,  flash memory,  stacked NAND,  vertical channel,  

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We propose a 3-dimensional terraced NAND flash memory. It has a vertical channel so it is possible to make a long enough channel in 1F2 size. And it has 3-dimensional structure whose channel is connected vertically along with two stairs. So we can obtain high density as in the stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its fabrication method is proposed.