For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
Jongwook JEON Ickhyun SONG Jong Duk LEE Byung-Gook PARK Hyungcheol SHIN
IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
CMOS, channel thermal noise, radio frequency integrated circuit (RFIC), low noise amplifier (LNA), noise figure,
Full Text: PDF>>
In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65 nm and 130 nm CMOS technologies, respectively.