Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics

Kyung-Chang RYOO  Jeong-Hoon OH  Sunghun JUNG  Hyungjin KIM  Byung-Gook PARK  

IEICE TRANSACTIONS on Electronics   Vol.E95-C   No.5   pp.842-846
Publication Date: 2012/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E95.C.842
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
RRAM,  conductive defect,  cell thickness,  reset current,  set voltage,  forming voltage,  and low power,  

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Effects of conductive defects on unipolar resistive random access memory (RRAM) are investigated in order to reduce the operation current for high density and low power RRAM applications. It is clarified that forming voltage decreases with increasing charged conductive defects which are a source of conductive filament (CF) path and with decreasing cell thickness. Random circuit breaker (RCB) network simulation model which is a dynamic percolation simulation model is used to elucidate these effects. From this simulation results, the optimal cell thickness with sufficient conductive defect shows improved resistive switching characteristics such as low forming voltage, small set voltage distribution and low reset current. From the deep understanding of relationship between conductive defect in various cell thickness and other resistive switching parameters, RRAM with low forming voltage and reset current can be obtained and it will be one of the most promising next generation nonvolatile memories.