Doo-Hyun KIM

A New 1T DRAM Cell: Cone Type 1T DRAM Cell
Gil Sung LEE Doo-Hyun KIM Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 681-685
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
1T DRAM, cone, electric field concentration, 
 Summary | Full Text:PDF
Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
Doo-Hyun KIM Il Han PARK Seongjae CHO Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 659-663
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SONOS, flash memory, nitride-based charge trap memory, retention, multi-bit, double gate, 
 Summary | Full Text:PDF
Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI)
Seongjae CHO Il Han PARK Jung Hoon LEE Jang-Gn YUN Doo-Hyun KIM Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 731-735
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
memory array, electrical interference, 3-D memory device, read operation, PCI (paired cell interference), 
 Summary | Full Text:PDF
Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
Jang Gn YUN Il Han PARK Seongjae CHO Jung Hoon LEE Doo-Hyun KIM Gil Sung LEE Yoon KIM Jong Duk LEE Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 742-746
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
2-bit recessed channel memory, lifted-charge trapping node (L-CTN) scheme, short channel effect (SCE), second bit effect (SBE), bottom-side effect (BSE), VTH window, 
 Summary | Full Text:PDF