Jang-Gn YUN


Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
NANDflash memoryprogram inhibitionself-boostingFinFETdevice simulation
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Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI)
Seongjae CHO Il Han PARK Jung Hoon LEE Jang-Gn YUN Doo-Hyun KIM Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 731-735
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
memory arrayelectrical interference3-D memory deviceread operationPCI (paired cell interference)
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Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices
Seongjae CHO Jang-Gn YUN Il Han PARK Jung Hoon LEE Jong Pil KIM Jong-Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 988-993
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
3-D devicesvertical ion implantationdoping profileconcentration peakdoping gradient
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Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology
Soon-Young OH Jang-Gn YUN Bin-Feng HUANG Yong-Jin KIM Hee-Hwan JI Sang-Bum HUH Han-Seob CHA Ui-Sik KIM Jin-Suk WANG Hi-Deok LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 651-655
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
Ni-silicidebi-layer cappingternary phasenano-scale MOSFET
 Summary | Full Text:PDF