Gil Sung LEE


A New 1T DRAM Cell: Cone Type 1T DRAM Cell
Gil Sung LEE Doo-Hyun KIM Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 681-685
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
1T DRAMconeelectric field concentration
 Summary | Full Text:PDF

Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL)
Seongjae CHO Jung Hoon LEE Gil Sung LEE Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 620-626
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
3-D nonvolatile memoryNAND flash memory arraysaturation currentchannel potential barriergate-induced barrier lowering (GIBL)
 Summary | Full Text:PDF

3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array
Yoon KIM Seongjae CHO Gil Sung LEE Il Han PARK Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 653-658
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
NANDflash memorystacked NANDvertical channel
 Summary | Full Text:PDF

Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme
Jang Gn YUN Il Han PARK Seongjae CHO Jung Hoon LEE Doo-Hyun KIM Gil Sung LEE Yoon KIM Jong Duk LEE Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 742-746
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
2-bit recessed channel memorylifted-charge trapping node (L-CTN) schemeshort channel effect (SCE)second bit effect (SBE)bottom-side effect (BSE)VTH window
 Summary | Full Text:PDF