Keyword : saturation current


Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL)
Seongjae CHO Jung Hoon LEE Gil Sung LEE Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 620-626
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
3-D nonvolatile memoryNAND flash memory arraysaturation currentchannel potential barriergate-induced barrier lowering (GIBL)
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