Jong Pil KIM


Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices
Seongjae CHO Jang-Gn YUN Il Han PARK Jung Hoon LEE Jong Pil KIM Jong-Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 988-993
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
3-D devicesvertical ion implantationdoping profileconcentration peakdoping gradient
 Summary | Full Text:PDF

Design and Simulation of Asymmetric MOSFETs
Jong Pil KIM Woo Young CHOI Jae Young SONG Seongjae CHO Sang Wan KIM Jong Duk LEE Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 978-982
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword: 
asymmetric MOSFETLDDmesa structuresidewall spacer gate
 Summary | Full Text:PDF