Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 988-993 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: 3-D devices, vertical ion implantation, doping profile, concentration peak, doping gradient,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 978-982 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Junction Formation and TFT Reliability Keyword: asymmetric MOSFET, LDD, mesa structure, sidewall spacer gate,
