Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C
No. 5
pp. 742-746
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
2-bit recessed channel memory, lifted-charge trapping node (L-CTN) scheme, short channel effect (SCE), second bit effect (SBE), bottom-side effect (BSE), VTH window, |
