Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2015/05/01 Vol. E98-CNo. 5pp. 429-433 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: RRAM, switching and conduction mechanism, top electrode (TE),
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-CNo. 5pp. 681-685 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 1T DRAM, cone, electric field concentration,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-CNo. 5pp. 596-601 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: NAND, flash memory, program inhibition, self-boosting, FinFET, device simulation,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-CNo. 5pp. 540-545 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Multi-Gate Technology Keyword: tunnel field-effect transistor, subthreshold swing,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-CNo. 5pp. 647-652 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: single electron transistor, recessed channel, MOSFET current suppression,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-CNo. 5pp. 653-658 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: NAND, flash memory, stacked NAND, vertical channel,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 988-993 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: 3-D devices, vertical ion implantation, doping profile, concentration peak, doping gradient,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 978-982 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Junction Formation and TFT Reliability Keyword: asymmetric MOSFET, LDD, mesa structure, sidewall spacer gate,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-CNo. 5pp. 968-972 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: trap depth, RTN, time constants, poly gate depletion effect, surface potential variation,