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Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell VTH Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs)
Teruyoshi HATANAKA Mitsue TAKAHASHI Shigeki SAKAI Ken TAKEUCHI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2011/04/01
Vol. E94-C
No. 4 ;
pp. 539-547
Type of Manuscript:
Special Section PAPER (Special Section on Circuits and Design Techniques for Advanced Large Scale Integration)
Category:
Keyword:
NAND flash memory, ferroelectric, solid-state drive, SSD, | | | Summary | Full Text:PDF | |
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Polarization Fatigue Modeling of Ferroelectric Capacitors
Kiyoshi NISHIMURA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2002/06/01
Vol. E85-C
No. 6 ;
pp. 1334-1341
Type of Manuscript:
PAPER
Category: Microwaves, Millimeter-Waves
Keyword:
ferroelectric, fatigue, degradation, model, NVRAM, | | | Summary | Full Text:PDF | |
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Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C
No. 4 ;
pp. 577-583
Type of Manuscript:
Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category:
Keyword:
ferroelectric, MFSFET, SrBi2Ta2O9, Si non-volatile memory, memory, | | | Summary | Full Text:PDF | |
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