Yukio FUKUDA


Formation of Reliable Pb(Ti, Zr)O3 Thin-Film Capacitors for Read/Write Endurance of Ferroelectric Non-volatile Memories
Katsuhiro AOKI Yukio FUKUDA Ken NUMATA Akitoshi NISHIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 537-544
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
PZTfatigueferroelectricthin-film capacitoriridiumsol-gel
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Influence of the Relaxation Current in BaxSr(1-x) TiO3 Thin Film Capacitors on DRAM Operation
Ken NUMATA Yukio FUKUDA Katsuhiro AOKI Yasutoshi OKUNO Akitoshi NISHIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7  pp. 1043-1055
Type of Manuscript:  PAPER
Category: Recording and Memory Technologies
Keyword: 
cell capacitor dielectricrelaxation currentBSTpower lawdivergence
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Thresholding Characteristics of an Optically Addressable GaAs-pin/Ferroelectric Liquid Crystal Spatial Light Modulator and Its Applications
Masashi HASHIMOTO Yukio FUKUDA Shigeki ISHIBASHI Ken-ichi KITAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/11/25
Vol. E75-C  No. 11  pp. 1395-1398
Type of Manuscript:  LETTER
Category: Opto-Electronics
Keyword: 
optoelectronicsoptically addressable spatial light modulatorGaAs pin photodiodeferroelectric liquid crystaloptical information processing
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Threshold-Voltage Instability of MOS Transistors in an LSI Memory under Accelerated Operating Test Condition at 77 K
Yoshio WATANABE Katsumi KAIZU Yukio FUKUDA 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1983/06/25
Vol. E66-E  No. 6  pp. 397-398
Type of Manuscript:  LETTER
Category: Integrated Circuits
Keyword: 
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