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A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model
Marc ULLMANN Holger GOEBEL Heinz HOENIGSCHMID Thomas HANEDER
IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Circuit Applications
ferroelectric, FEMFET, MFIS, modeling, simulation,
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A BSIM3v3 based ferroelectric memory field effect transistor (FEMFET) compact model for circuit simulation is presented. Its analytical approach is based on the MOS capacitor equations taking into account the influence of a ferroelectric polarization. The hysteresis behavior of the gate ferroelectric has been modeled by using the distribution function integral method (DFIM). The parameters for the presented simulations were extracted by measurements on MIS and MFIS structures.