A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors

Nobuhito OGATA  Hiroshi ISHIWARA  

IEICE TRANSACTIONS on Electronics   Vol.E84-C   No.6   pp.777-784
Publication Date: 2001/06/01
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
ferroelectric,  memory,  transistor,  model,  simulation,  C-V characteristic,  

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The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.