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A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors
Nobuhito OGATA Hiroshi ISHIWARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Nonvolatile Memories)
ferroelectric, memory, transistor, model, simulation, C-V characteristic,
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The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.