Ferroelectric Nonvolatile Memory Technology

Tatsumi SUMI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.6   pp.812-818
Publication Date: 1996/06/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on ULSI Memory Technology)
Category: Nonvolatile memories
Keyword: 
ferroelectric,  nonvolatile,  memory,  material,  cell,  architecture,Y1,256 kbit FeRAM,  

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Summary: 
Ferroelectic nonvolatile technology comprises the ferroelectric material technology, the process technology and the circuit technology. Bi based layered Perovskyte ferroelectric material, SrBi2Ta2O9, so called "Y 1," has superior characteristics in terms of endurance and nonvolatile properties, which is confirmed by a 256kbit ferroelectric nonvolatile memory. Critical issues regarding the ferroelectric process are reviewed. The lT/lC cell configuration which is essential for a high density memory and the reference voltage generator employed in the 256 k memory are described as is the architecture to reduce the power consumption of the memory.