Heinz HOENIGSCHMID


A BSIM3v3 and DFIM Based Ferroelectric Field Effect Transistor Model
Marc ULLMANN Holger GOEBEL Heinz HOENIGSCHMID Thomas HANEDER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1324-1330
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Circuit Applications
Keyword: 
ferroelectricFEMFETMFISmodelingsimulation
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