Study of Ferroelectric Materials for Ferroelectric Memory FET

Yoshikazu FUJIMORI  Naoki IZUMI  Takashi NAKAMURA  Akira KAMISAWA  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.4   pp.572-576
Publication Date: 1998/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
ferroelectric,  thin film,  MFMIS,  low dielectric constant,  sol-gel,  strontium niobate,  strontium tantalate niobate,  hysteresis,  

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In this paper, we discuss ferroelectric materials suitable for a metal ferroelectric metal insulator semiconductor FET (MFMIS FET). It is important for a ferroelectric material to have a low dielectric constant to enable the application of sufficient electric field to a ferroelectric layer. Films of Sr2Nb2O7 (SNO) and Sr2(Ta1-xNbx)2O7 (STNO) were prepared by the sol-gel method on Pt/IrO2 electrodes for an MFMIS FET. The ferroelectricities of STNO films were confirmed in the range of x=0. 1-0. 3. In case of x=0. 3, the largest remanent polarization was obtained in the hysteresis loop. The remanent polarization and the coercive field are 0. 5 µ C/cm2 and 44 kV/cm, respectively. The film had a low dielectric constant (ε=53). It is considered that the characteristics of STNO thin films are suitable for MFMIS FET.