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| Keyword : leakage current
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Single-Power-Supply Six-Transistor CMOS SRAM Enabling Low-Voltage Writing, Low-Voltage Reading, and Low Standby Power Consumption
Tadayoshi ENOMOTO Nobuaki KOBAYASHI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2023/09/01
Vol. E106-C
No. 9 ;
pp. 466-476
Type of Manuscript:
PAPER
Category: Electronic Circuits
Keyword:
complementary metal-oxide-semiconductor (CMOS), static random-access memory (SRAM), write margin, read margin, standby power consumption, leakage current, minimum supply voltage, area overhead, self-controllable voltage level circuit, single power source, | | | Summary | Full Text:PDF | |
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