Seiji INUMIYA


Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors
Yanli PEI Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI Seiji INUMIYA Yasuo NARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 962-967
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
HfSiOxNymetal gateleakage currentcharge trappingTDDB
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