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IEICE Trans

Riichiro SHIROTA

A Novel Programming Method Using a Reverse Polarity Pulse in Flash EEPROMs Hirohisa IIZUKA Tetsuo ENDOH Seiichi ARITOME Riichiro SHIROTA Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/06/25 Vol. E79-C No. 6 pp. 832-835 Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology) Category: Nonvolatile memories Keyword: flash EEPROM, oxide leakage current, hole trap, reverse polarity pulse, read disturb,
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Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling Seiichi ARITOME Riichiro SHIROTA Koji SAKUI Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/08/25 Vol. E77-C No. 8 pp. 1287-1295 Type of Manuscript: Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories) Category: Non-volatile Memory Keyword: flash EEPROM, data retention, endurance, tunnel oxide, electron traps,
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A Study of High-Performance NAND Structured EEPROMS Tetsuo ENDOH Riichiro SHIROTA Seiichi ARITOME Fujio MASUOKA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/11/25 Vol. E75-C No. 11 pp. 1351-1357 Type of Manuscript: Special Section PAPER (Special Issue on LSI Memories) Category: Keyword: flash EEPROM, NAND EEPROM endurance, block technology, page program technology,
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Reviews and Prospects of Non-Volatile Semiconductor Memories Fujio MASUOKA Riichiro SHIROTA Koji SAKUI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1991/04/25 Vol. E74-C No. 4 pp. 868-874 Type of Manuscript: INVITED PAPER (Special Issue on LSI Memories) Category: ROM Keyword:
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