Hirohisa IIZUKA


New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films
Tetsuo ENDOH Kazuyosi SHIMIZU Hirohisa IIZUKA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10  pp. 1310-1316
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
thin oxide filmsstress leakage currentflash memorystep tonneling
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New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics
Tetsuo ENDOH Hirohisa IIZUKA Riichirou SHIROTA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10  pp. 1317-1323
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memoryread disturb characteristicswrite/erase operationstress leakage current
 Summary | Full Text:PDF

A Novel Programming Method Using a Reverse Polarity Pulse in Flash EEPROMs
Hirohisa IIZUKA Tetsuo ENDOH Seiichi ARITOME Riichiro SHIROTA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6  pp. 832-835
Type of Manuscript:  Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Nonvolatile memories
Keyword: 
flash EEPROMoxide leakage currenthole trapreverse polarity pulseread disturb
 Summary | Full Text:PDF