Reviews and Prospects of Non-Volatile Semiconductor Memories

Fujio MASUOKA  Riichiro SHIROTA  Koji SAKUI  

IEICE TRANSACTIONS on Electronics   Vol.E74-C   No.4   pp.868-874
Publication Date: 1991/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on LSI Memories)
Category: ROM

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Recent technical trends of electrically programmable ROM (E-PROM) and electrically erasable and programmable PROM (EE-PROM) are reviewed in this paper. The reduction of the cell size and high speed access have been realized by the several breakthroughs of the device structure. The invention of the Flash EE-PROM makes the cell size same as that of E-PROM. Therefore, the bit capacity of Flash EE-PROM is supposed to be quadrupled every three years, same as DRAM's and E-PROM's scaling speed. Furthermore, the much higher density EE-PROM can be realized by the use of the NAND EE-PROM, recently. The invention of the NAND EE-PROM has enabled the semiconductor device engineers to replace the magnetic memory with Si device in very near future.