Keyword : tunnel oxide


Improvement in Retention/Program Time Ratio of Direct Tunneling Memory (DTM) for Low Power SoC Applications
Kouji TSUNODA Akira SATO Hiroko TASHIRO Toshiro NAKANISHI Hitoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4 ; pp. 608-613
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power LSI and Low-Power IP)
Category: Memory
Keyword: 
system-on-a-chipembedded RAMdirect tunnelingtunnel oxidegate depletion
 Summary | Full Text:PDF

MNOS Nonvolatile Semiconductor Memory Technology: Present and Future
Yoshiaki KAMIGAKI Shin'ichi MINAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 713-723
Type of Manuscript:  INVITED PAPER (Special Issue on Nonvolatile Memories)
Category: MNOS Memory
Keyword: 
MNOS (MONOS)EEPROMnonvolatile semiconductor memorytunnel oxidetrapping nitride
 Summary | Full Text:PDF

Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling
Seiichi ARITOME Riichiro SHIROTA Koji SAKUI Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8 ; pp. 1287-1295
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
flash EEPROMdata retentionendurancetunnel oxideelectron traps
 Summary | Full Text:PDF