Seiichi ARITOME

A Novel Programming Method Using a Reverse Polarity Pulse in Flash EEPROMs
Hirohisa IIZUKA Tetsuo ENDOH Seiichi ARITOME Riichiro SHIROTA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Vol. E79-C  No. 6  pp. 832-835
Type of Manuscript:  Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Nonvolatile memories
Keyword: 
flash EEPROM, oxide leakage current, hole trap, reverse polarity pulse, read disturb, 
 Summary | Full Text:PDF
Data Retention Characteristics of Flash Memory Cells after Write and Erase Cycling
Seiichi ARITOME Riichiro SHIROTA Koji SAKUI Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8  pp. 1287-1295
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
flash EEPROM, data retention, endurance, tunnel oxide, electron traps, 
 Summary | Full Text:PDF
A Study of High-Performance NAND Structured EEPROMS
Tetsuo ENDOH Riichiro SHIROTA Seiichi ARITOME Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/11/25
Vol. E75-C  No. 11  pp. 1351-1357
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
flash EEPROM, NAND EEPROM endurance, block technology, page program technology, 
 Summary | Full Text:PDF