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| Keyword : silicon
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Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics
Ryoichi ISHIHARA Jin ZHANG Miki TRIFUNOVIC Jaber DERAKHSHANDEH Negin GOLSHANI Daniel M. R. TAJARI MOFRAD Tao CHEN Kees BEENAKKER Tatsuya SHIMODA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2014/04/01
Vol. E97-C
No. 4 ;
pp. 227-237
Type of Manuscript:
INVITED PAPER (Special Section on Solid-State Circuit Design,---,Architecture, Circuit, Device and Design Methodology)
Category:
Keyword:
silicon, thin-film transistor, 3D-ICs, excimer-laser, crystallization, SRAM, image sensor, flexible electronics, | | | Summary | Full Text:PDF | |
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A Flexible Microwave De-Embedding Method for On-Wafer Noise Parameter Characterization of MOSFETs
Yueh-Hua WANG Ming-Hsiang CHO Lin-Kun WU | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2009/09/01
Vol. E92-C
No. 9 ;
pp. 1157-1162
Type of Manuscript:
Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications)
Category:
Keyword:
de-embedding, microwave, MOSFETs, noise, RF, silicon, | | | Summary | Full Text:PDF | |
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Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate
Gong-Ru LIN | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C
No. 2 ;
pp. 173-180
Type of Manuscript:
INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category:
Keyword:
Si-ion-implantation, PECVD, nanocrystal, silicon, Si-rich SiOx, nano-pyramids, nano-pillars, MOSLED, electroluminescence, Fowler-Nordheim tunneling, | | | Summary | Full Text:PDF | |
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The Impact of Silicon Photonics
Richard SOREF | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Vol. E91-C
No. 2 ;
pp. 129-130
Type of Manuscript:
INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
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Keyword:
silicon, optoelectronics, integrated photonics, | | | Summary | Full Text:PDF | |
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In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations
Christoph JUNGEMANN Bernd MEINERZHAGEN | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3 ;
pp. 314-319
Type of Manuscript:
Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
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Keyword:
silicon, noise, drift-diffusion, hydrodynamic, Monte Carlo, | | | Summary | Full Text:PDF | |
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Modeling of Dopant Diffusion in Silicon
Scott T. DUNHAM Alp H. GENCER Srinivasan CHAKRAVARTHI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C
No. 6 ;
pp. 800-812
Type of Manuscript:
INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category:
Keyword:
dopant diffusion, point defects, silicon, interstitial, vacancy, dopant/defect pairing, coupled diffusion, pair diffusion, diffusivity, equilibrium concentration, metal diffusion, lattice Monte Carlo, | | | Summary | Full Text:PDF | |
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1/5 Power Law in PN-Junction Failure Mechanism Caused by Electrical-Over-Stress