Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C
No. 8
pp. 1267-1274
Type of Manuscript:
Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword:
diffusion, finite element, three-dimensional, gear scheme, point-defects, silicon, |