Fabrication of Silicon Quantum Wires and Dots

Yoshihiko HIRAI  Kiyoshi MORIMOTO  Masaaki NIWA  Koichiro YUKI  Juro YASUI  

IEICE TRANSACTIONS on Electronics   Vol.E77-C   No.9   pp.1426-1430
Publication Date: 1994/09/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
silicon,  quantum wire,  quantum dot,  anisotropic etching,  

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Fabrication methods of novel silicon quantum wires and dots using anisotropic wet chemical etching and thermal oxidation are newly proposed. The method realizes fine Si quantum wires, which are fully surrounded by the thermal SiO2 without any defects. The wires are straight and the Si/SiO2 interfaces are fairly flat. The 10 nm width wires are confirmed by Transmitting Scanning Microscopy observation in minimum size. The fine quantum dots are also fabricated using this method. The characteristics of the wires are investigated and the current oscillations in variation with the gate voltage are observed in low temperature. We believe the origin of these oscillations arise from one-dimensional subband conduction.