Micromachined RF Devices for Concurrent Integration on Dielectric-Air-Metal Structures

Tamotsu NISHINO  Masatake HANGAI  Yukihisa YOSHIDA  Sang-Seok LEE  

IEICE TRANSACTIONS on Electronics   Vol.E93-C    No.7    pp.1111-1118
Publication Date: 2010/07/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1111
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies)
micromachine,  MEMS,  hollow waveguides,  GCPW,  filters,  hybrids,  MEMS switches,  silicon,  

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This paper proposes a concept of a concurrent configuration of radio-frequency (RF) micromachined and micro-electro-mechanical-system (MEMS) devices. The devices are fabricated on an originally developed dielectric-air-metal (DAM) structure that suits for fabrication of various devices all together. The DAM structure can propose membrane-supported hollow elements embedded in a silicon wafer by creating cavities in it. Even though the devices have different cavity depths, they are processed by just one planarization. In addition, since the structure is worked only from the front side of the wafer, no flipping process as well as no wafer bonding process is required, and the fact realizes low-cost concurrent integration. As applications of the DAM structures, a hollow grounded co-planar waveguide, lumped element circuitries, and an MEMS switch are demonstrated.