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Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode
Kiichi KAMIMURA Hiroaki SHIOZAWA Tomohiko YAMAKAMI Rinpei HAYASHIBE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C
No. 12
pp. 1470-1474
Type of Manuscript:
Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
Category: Fundamentals for Nanodevices
Keyword:
SiC, nitride, interface, MIS Schottky, | | | Summary | Full Text:PDF | |
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The Interfacial Characteristics of MIS Structures Using Carbon Films as Insulator
Kiyoshi ISHII Hiroto TAKEUCHI Hiroaki MAKIMURA Kiichi KAMIMURA Yoshiharu ONUMA | Publication: IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E
No. 4
pp. 479-481
Type of Manuscript:
Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Materials
Keyword:
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Preparation of Polycrystalline Ge Films by Photo-Assisted Chemical Vapor Deposition
Yumi KAKUHARA Kyohichi TEZUKA Kiichi KAMIMURA Yoshiharu ONUMA | Publication: IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E
No. 4
pp. 476-478
Type of Manuscript:
Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Materials
Keyword:
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