The Interfacial Characteristics of MIS Structures Using Carbon Films as Insulator

Kiyoshi ISHII  Hiroto TAKEUCHI  Hiroaki MAKIMURA  Kiichi KAMIMURA  Yoshiharu ONUMA  

IEICE TRANSACTIONS (1976-1990)   Vol.E69   No.4   pp.479-481
Publication Date: 1986/04/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Materials

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Hard and insulating carbon films were prepared by r.f. plasma chemical vapor deposition with d.c. bias. The interfacial characteristics of MIS structures using carbon films as insulator were investigated. The interface state density was 1011eV1cm2 for carbon-Si and carbon-InP MIS diodes.