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Preparation of Cuprous Oxide (Cu2O) Thin Films by Reactive DC Magnetron Sputtering
Kiichi KAMIMURA Haruki SANO Katsuya ABE Rinpei HAYASHIBE Tomohiko YAMAKAMI Masato NAKAO Yoshiharu ONUMA
IEICE TRANSACTIONS on Electronics
Publication Date: 2004/02/01
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Oxide Thin Films by Sputtering)
Cu2O, reactive sputtering, thin film,
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Cuprous Oxide Cu2O films were deposited by reactive DC magnetron sputtering. The substrate temperature and oxygen partial pressure were found to be important parameters in controlling the film property. The single-phase Cu2O films were successfully obtained by carefully controlling the oxygen partial pressure with suppression of CuO formation. The (100)-oriented epitaxial Cu2O film was grown on the (102) surface of single-crystal Al2O3. The fundamental absorption edge of the Cu2O film was determined to be about 2 eV by photo-transmission measurement. The resistivity of the film was of the order of 105 Ωcm.