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Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode
Kiichi KAMIMURA Hiroaki SHIOZAWA Tomohiko YAMAKAMI Rinpei HAYASHIBE
IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
Category: Fundamentals for Nanodevices
SiC, nitride, interface, MIS Schottky,
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Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 1012 cm-2eV-1, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO2/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.