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| Hans Jurgen MATTAUSCH
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Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Takahiro IIZUKA Masahiko TAGUCHI Shunsuke MIYAMOTO | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2009/06/01
Vol. E92-C
No. 6
pp. 777-784
Type of Manuscript:
Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category:
Keyword:
accumulation-mode, MOS varactor, carrier-transit delay, nonquasi-static effect, compact model, surface potential, circuit simulation, LC-VCO, frequency-tuning range, FTR, oscillation amplitude, | | | Summary | Full Text:PDF | |
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Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Takahiro IIZUKA Kazuya MATSUZAWA Yasuyuki SAHARA Teruhiko HOSHIDA Toshiro TSUKADA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C
No. 5
pp. 608-615
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
carrier dynamics, low voltage, displacement current, continuity equation, carrier-transit delay, nonquasi-static effect, compact MOSFET model, driving capability, drift, diffusion, surface potential, circuit simulation, | | | Summary | Full Text:PDF | |
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