1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation

Shizunori MATSUMOTO  Hiroaki UENO  Satoshi HOSOKAWA  Toshihiko KITAMURA  Mitiko MIURA-MATTAUSCH  Hans Jurgen MATTAUSCH  Tatsuya OHGURO  Shigetaka KUMASHIRO  Tetsuya YAMAGUCHI  Kyoji YAMASHITA  Noriaki NAKAYAMA  

IEICE TRANSACTIONS on Electronics   Vol.E88-C    No.2    pp.247-254
Publication Date: 2005/02/01
Online ISSN: 
DOI: 10.1093/ietele/e88-c.2.247
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
100 nm-MOSFET,  1/f noise,  measurement,  modeling,  

Full Text: PDF>>
Buy this Article

A systematic experimental and modeling study is reported, which characterizes the low-frequency noise spectrum of 100 nm-MOSFETs accurately. Two kinds of measured spectra are observed: 1/f and non-1/f spectra. The non-1/f spectrum is analysed by forward and backward measurements with exchanged source and drain, and shown to be due to a randomly distributed inhomogeneity of the trap density along the channel and within the gate oxide. By averaging the spectra of identical MOSFETs on a wafer the measured non-1/f noise spectra reduce to a 1/f characteristics. On the basis of these measurement data a noise model for circuit simulation is developed, which reproduces the low-frequency noise spectrum with a single model parameter for all gate lengths and under any bias conditions.