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Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Takahiro IIZUKA Masahiko TAGUCHI Shunsuke MIYAMOTO
Publication
IEICE TRANSACTIONS on Electronics
Vol.E92-C
No.6
pp.777-784 Publication Date: 2009/06/01 Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.777 Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: accumulation-mode, MOS varactor, carrier-transit delay, nonquasi-static effect, compact model, surface potential, circuit simulation, LC-VCO, frequency-tuning range, FTR, oscillation amplitude,
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Summary:
Frequency dependent properties of accumulation-mode MOS varactors, which are key elements in many RF circuits, are dominated by Non-Quasi-Static (NQS) effects in the carrier transport. The circuit performances containing MOS varactors can hardly be reproduced without considering the NQS effect in MOS-varactor models. For the LC-VCO circuit as an example it is verified that frequency-tuning range and oscillation amplitude can be overestimated by over 20% and more than a factor 2, respectively, without inclusion of the NQS effect.
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