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Vol.E80-C No.3
pp.357-357
FOREWORD
FOREWORD
Hisashi HARA, |
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Vol.E80-C No.3
pp.358-363
INVITED PAPER
Wafer Technologies
SMART-CUT(R): The Basic Fabrication Process for UNIBOND(R) SOI Wafers
A.J. AUBERTON-HERVE, Michel BRUEL, Bernard ASPAR, Christophe MALEVILLE, Hubert MORICEAU, |
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Vol.E80-C No.3
pp.364-369
INVITED PAPER
Wafer Technologies
High-Quality Low-Dose SIMOX Wafers
Sadao NAKASHIMA, |
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Summary | Full Text:PDF | |
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Vol.E80-C No.3
pp.370-377
INVITED PAPER
Wafer Technologies
Contribution of Polished Surface Waviness to Final SOI Thickness Uniformity of Bonded Wafers through PACE Process
Kiyoshi MITANI, Masatake NAKANO, Takao ABE, |
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Vol.E80-C No.3
pp.378-387
INVITED PAPER
Wafer Technologies
Current Progress in Epitaxial Layer Transfer (ELTRAN(R))
Kiyofumi SAKAGUCHI, Nobuhiko SATO, Kenji YAMAGATA, Tadashi ATOJI, Yasutomo FUJIYAMA, Jun NAKAYAMA, Takao YONEHARA, |
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Vol.E80-C No.3
pp.388-393
INVITED PAPER
Device and Process Technologies
Physical Modeling Needed for Reliable SOI Circuit Design
Jerry G. FOSSUM, Srinath KRISHNAN, |
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Summary | Full Text:PDF | |
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Vol.E80-C No.3
pp.394-406
INVITED PAPER
Device and Process Technologies
Features of Ultimately Miniaturized MOSFETs/SOI: A New Stage in Device Physics and Design Concepts
Yasuhisa OMURA, |
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Vol.E80-C No.3
pp.407-416
Special SectionPAPER
An Advanced Shallow SIMOX/CMOS Technology for High Performance Portable Systems
Alberto O. ADAN, Toshio NAKA, Seiji KANEKO, Daizo URABE, Kenichi HIGASHI, Yasumori FUKUSHIMA, Soshu TAKAMATSU, Shogo HIDESHIMA, Atsushi KAGISAWA, |
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Summary | Full Text:PDF | |
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Vol.E80-C No.3
pp.417-422
Special SectionPAPER
Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach
Tsukasa OOOKA, Hideyuki IWATA, Takashi OHZONE, |
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Summary | Full Text:PDF | |
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Vol.E80-C No.3
pp.423-430
Special SectionPAPER
Analysis of Self-Heating in SOI High Voltage MOS Transistor
Hitoshi YAMAGUCHI, Hiroaki HIMI, Shigeyuki AKITA, Toshiyuki MORISHITA, |
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Summary | Full Text:PDF | |
| Current List: 36671 - 36680
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