Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1995/03/25 Vol. E78-CNo. 3pp. 293-298 Type of Manuscript: Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies) Category: Keyword: deep submicron, CMOS, gate resistance, salicide, propagation delay time, SPICE,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/03/25 Vol. E77-CNo. 3pp. 480-485 Type of Manuscript: Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies) Category: Process Technology Keyword: Ti, TiSi2, salicide, subquarter-micron CMOS, gate resistance,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1993/04/25 Vol. E76-CNo. 4pp. 572-576 Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies) Category: Device Technology Keyword: SOI bipolar transistors, thin buried layer, wafer bonding, selective polishing,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/12/25 Vol. E75-CNo. 12pp. 1453-1458 Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices) Category: SOI Devices Keyword: bonded SOI, lateral bipolar, sidewall self-aligning base, BiCMOS, recrystallization,