A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI

Naoshi HIGAKI  Tetsu FUKANO  Atsushi FUKURODA  Toshihiro SUGII  Yoshihiro ARIMOTO  Takashi ITO  

IEICE TRANSACTIONS on Electronics   Vol.E75-C   No.12   pp.1453-1458
Publication Date: 1992/12/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
bonded SOI,  lateral bipolar,  sidewall self-aligning base,  BiCMOS,  recrystallization,  

Full Text: PDF>>
Buy this Article

We fabricated a 4 GHz thin-base (120 nm) lateral bipolar transistor on bonded SOI by applying our sidewall self-aligning base process. By applying this device to BiCMOS circuits, bipolar transistor base junction capacitance, and MOSFET source and drain capacitance were very small. Furthermore, MOSFET and bipolar transistors are completely isolated from each other. Thus, it is easy to optimize MOS and bipolar processes, and provide protection from latch-up problems and soft errors caused by α-particles. In this paper, we describe device characteristics and discuss the crystal quality degradation introduced by ion implantation, and two dimensional effects of base diffusion capacitance.