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High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques
Manabu KOJIMA Atsushi FUKURODA Tetsu FUKANO Naoshi HIGAKI Tatsuya YAMAZAKI Toshihiro SUGII Yoshihiro ARIMOTO Takashi ITO
IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
SOI bipolar transistors, thin buried layer, wafer bonding, selective polishing,
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We propose a high-speed SOI bipolar transistor fabricated using bonding and thinning techniques. It is important to replace SOI area except for devices with thick SiO2 to reduce parasitic capacitance. A thin SOI film with a thin buried layer helps meet this requirement. We formed a 1-µm-thick SOI film with a 0.7-µm-thick buried layer by ion implantation before wafer bonding pulse-field-assisted bonding and selective polishing. Devices were completely isolated by thick SiO2 using a thin SOI film and the LOCOS process. We fabricated epitaxial base transistors (EBTs) on bonded SOI. Our transistors had a cutoff frequency of 32 GHz.