Fabrication and Delay Time Analysis of Deep Submicron CMOS Devices

Yasuo NARA  Manabu DEURA  Ken-ichi GOTO  Tatsuya YAMAZAKI  Tetsu FUKANO  Toshihiro SUGII  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E78-C   No.3   pp.293-298
Publication Date: 1995/03/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
deep submicron,  CMOS,  gate resistance,  salicide,  propagation delay time,  SPICE,  

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Summary: 
This paper describes the fabrication of 0.1 µm gate length CMOS devices and analysis of delay time by circuit simulation. In order to reduce the gate resistance, TiN capped cobalt salicide technology is applied to the fabrication of 0.1 µm CMOS devices. Gate sheet resistance with a 0.1 µm gate is as low as 5 Ω/sq. Propagation delay times of 0.1 µm and 0.15 µm CMOS inverter are 21 ps and 36 ps. Simulated propagation delay time agreed fairly well with experimental results. For gate length over 0.15 µm, intrinsic delay in CMOS devices is the main dalay factor. This suggests that increasing current drivability is the most efficient way to improve propagation delay time. At 0.1 µm, each parasitic component and intrinsic delay have similar contributions on device speed due to the short channel effect. To improve delay time, we used rapid thermal annealing or a high dose LDD structure. With this structure, drain current increases by more than 1.3 times and simulation predicted a delay time of 28 ps is possible with 0.15 µm CMOS inverters.