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| Rinpei HAYASHIBE
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Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode Kiichi KAMIMURA Hiroaki SHIOZAWA Tomohiko YAMAKAMI Rinpei HAYASHIBE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C
No. 12
pp. 1470-1474
Type of Manuscript:
Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology) Category: Fundamentals for Nanodevices Keyword: SiC, nitride, interface, MIS Schottky, | | | Summary | Full Text:PDF | |
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